<$mi-(l on ., u na. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 tmos iv MTP25N05E risvvc;i i iv^iui i_ii?7i*b iiciiioioiui n-channel enhancement-mode silicon gate this advanced "e" series of tmos power mosfets is designed to withstand high energy in the avalanche and commutation modes. these new energy efficient devices also offer drain-to-source diodes with fast recovery times. designed for low voltage, high speed switching applications in power supplies, converters and pwm motor con- trols, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. ? ipto'n"1 ^'''m-to-n'pin riiortf) ripfiqrifiri to pbp|acb __..?,, external zener transient suppressor ? absorbs high iv^k ^sb energy in the avalanche mode ? undamped ^?hf""' inductive switching (uis) energy capability specified llll at 100'c. ' l||| ? commutating safe operating area (csoa) specified for ?jh5it?' 11,9 in halt pprt full rririfji, circuits .. ,^?**~ .. ? source to-drgin diode recovery time comparable to a discrete fast recovery diode ? diode is characterized for use in bridge circuits maximum ratings (tj = 25'c unless otherwise noted) rating drain-source voltage drain-gate voltage (rqs - 1 mil) gate-source voltage ? continuous ? non-repetitive dp 50 us) drain current ? > continuous ? pulsed total power dissipation fi tc - 25c derate above 2s'c operating and storage temperature range symbol vdss vdgr vgs vgsm id idm pd tj, t8(g tmos power fets 25 amperes rds(on) = 0,07 ohm 50 volts .jj> to-220ab value so 60 20 40 25 80 100 0.8 -6510 150 unit vdc vdc vdc vpk artc watts ?c thermal characteristics thermal resistance ? junction to case ? junction to ambient maximum lead temperature for soldering purposes, 1/8* from case for 5 seconds r?jc tl 1.25 62.5 275 ow ?c lhsigntr's data for "wo?t c?m" conditions ? tno designer's data sheet permits the design of most circuits entirely from tho ioformvllon pr?**it?d sqa limit curves ? representing boundaries on devfca charbctenstics ? era given to facilitate "worst c4?" design. oiinlltv nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. inrormat.on furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use n.i semi-conductors encourages customers to verify that datasheets are current before placing orders
mtp2sn05e electrical characteristics (tc - 2s'c unless otherwise noted) charae;erlstic symbol mln off characteristics drain-source breakdown voltage p/gs - 0, id - 0.25 ma) zero gate voltage drain current (vds - r?ted vdss- vqs - o) (vos = rated vdss- vgs - 0, tj = 12sc) gate-body leakage current, forward (vgsf = 20 vdc- vds ? 0) gate-body leakage currant, reverse (vqsr - 20 vdc, vds = 01 v(br)dss idss igssf igssr 60 - ? ? ? 10' 100 100 100 vdc ma ? nadc nadc on characteristics* gate threshold voltage (vos - vgs. id - zso 16 adc) drain-source on-voltage (vqs ? 10 v) (id = 25 adc) (id - 12.8 ade, tj = 100-c) forward transconductflnco (vds = 1'7s v< 'd = '6 a) vgstth) fds(on) vds(on) ofs 2 1.6 ? - 9 4 3.5 0.07 2 1 ? vdc ohm vdc mhos drain-to-source avalanche characteristics undamped drain-to-source avalanche energy see figures 14 and 15 do - 80 a, voq - 26 v, tc - 25?c, single pulse, non-repetitive) (id - 25 a, vdd = 25 v, tc - 26'c, p.w. * 200 ms, duty cycle ? 1%) (id = 10 a, vdd = 26 v, tc = hwc, p.w. s 200 ia, duty cycle ?; 1%) wosr - 90 200 90 mj dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vds - 25 v' vgs - o, f - 1 mhz) see figure 16 c|35 cogs crss - ? ? 1600 800 200 pf switching characteristics' (tj -- 100'c) turn-on delay time rise tims turn-off delay time fall time total gale charge gate-source charge gate-drain charge (vdd - 26 v, id - 16 a rgen = 15 ohms) see figure 9 (vos - 0.8 rated vdss. id - rated id, vqs - 10 v) see rgures 17 and 18 td(on) tr ?d(off) tf ofl ofl8 gd ? _ ? ? 28 (typ) 14 (typ) 12 (typ) 26 36 45 35 30 ? - ns nc source drain diode characteristics* forward on-vollage forward turn-on time reverse recovery time (is - 26 a vqs - 0) vsd 'on 'rr 1.3 (typ) 1.6 vdc limited by stray inductance 180ltyp) ? ns internal package inductance internal drain inductance (measured from the contact screw on tab to center of die) (measured from the drain lead 0.25* from package to center of die) internal source inductance (measured from the source lead 0.2e* from package to source bond pad.) ld l. 3.5 (typ) 4.8 (typ) 7.8 (typ) - ? ' nh ?pulu t?sl: pulu width ? 300 /u. duty cycle < 2%.
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